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Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
* Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Low thermal resistance
PBYR4045WT series
SYMBOL
QUICK REFERENCE DATA VR = 40 V/ 45 V IF(AV) = 40 A VF 0.58 V SOT429 (TO247)
DESCRIPTION
a1 1 k2
a2 3
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR4045WT series is supplied in the conventional leaded SOT429 (TO247) package.
PINNING
PIN 1 2 3 tab anode 1 (a) cathode (k) anode 2 (a) cathode
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR40 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average output current (both diodes conducting) Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature Tmb 107 C square wave; = 0.5; Tmb 120 C square wave; = 0.5; Tmb 120 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40WT 40 40 40 40 40 300 325 2 150 150 45WT 45 45 45 V V V A A A A A C C UNIT
IRRM Tj Tstg
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air MIN. TYP. MAX. UNIT 45 1.4 1 K/W K/W K/W
December 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF Forward voltage per diode CONDITIONS IF = 20 A; Tj = 125C IF = 40 A; Tj = 125C IF = 20 A IF = 40 A VR = VRWM VR = VRWM; Tj = 100C VR = 5 V; f = 1 MHz, Tj = 25C to 125C
PBYR4045WT series
MIN. -
TYP. MAX. UNIT 0.5 0.68 0.51 0.67 0.4 25 700 0.58 0.75 0.6 0.76 2.5 70 V V V V mA mA pF
IR Cd
Reverse current per diode Junction capacitance
December 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYR4045WT series
Forward dissipation, PF (W) 20 18 16 14 12 10 8 6 4 2 0 0 PBYR4045WT
Tmb(max) (C) D = 1.0 0.5 122 124.8 127.6 130.4 133.2 136 138.8 141.6 144.4 147.5 150 30 1000 100
Reverse Current, IR (mA)
PBYR4045WT
0.2 0.1
tp D = tp/T
Tj =125C 10 1 0.1 Tj =25C 0.01 0 10 20 30 Reverse Voltage, VR (V) 40 50 Tj =100C Tj =75C Tj =50C
T
5
10 15 20 25 Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
Forward dissipation, PF (W) 16 14 12 10 8 6 4 2 0 0 2.2 4 2.8 PBYR4045WT 1.9
Tmb(max) (C) 127.6 130.4 a = 1.57 133.2 136 138.8 141.6 144.4 147.2 150 100 1 1000 10000
Cd / pF
PBYR4045WT
5 10 15 Average forward current, IF(AV) (A)
20
10 VR / V
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
Forward Current, IF (A) 50 45 40 35 30 25 20 15 10 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Forward Voltage, VF (V) Tj =125 C PBYR4045WT
Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C.
Transient Thermal Impedance, Zth j-mb (K/W) PBYR4045WT 10 typ max 1 Single pulse P D 0.1
Tj = 25 C
tp
t 0.01 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp).
December 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8
PBYR4045WT series
o 3.5 max
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.7. SOT429 (TO247); pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8".
December 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PBYR4045WT series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
December 1998
5
Rev 1.000

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